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NUP4016P5T5G, SZNUP4016P5T5G
ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
V RWM
V BR
I R
(Note 1)
I T = 1 mA, (Note 2)
V RWM = 5 V
5.5
5.0
1.0
V
V
m A
Junction Capacitance
Junction Capacitance
C J
C J
V R = 0 V, f = 1 MHz between I/O Pins and GND
V R = 0 V, f = 1 MHz between I/O Pins
0.5
0.3
0.8
0.5
pF
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
3. Include SZ-prefix devices where applicable.
TYPICAL PERFORMANCE CURVES
(T J = 25 ? C unless otherwise noted)
Figure 1. ESD Clamping Voltage Screenshot
(8 kV Contact per IEC610000 ? 4 ? 2)
http://onsemi.com
2
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